Abracon公司为美国杰出的知名制造商,一直致力于研究高质量的石英晶体,通过自身的努力终有了一番成绩,为广泛应用程序提供了广泛的石英定时晶体和振荡器，MEMS振荡器，实时时钟(RTC)，蓝牙模块，陶瓷谐振器，锯滤器和谐振器，功率和射频电感，变压器，电路保护元件和射频天线和无线充电线圈。艾博康的高质量石英晶体ABM8W-38.4000MHZ-4-B2U-T3,比较适合用于超低功耗MCU

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The primary driving force behind this industry trend is related to the reduction in total consumed power, while improving overall performance. This effort is being undertaken to facilitate the practical implementation of battery powered end-solutions (consumer, medical, IoT, industrial, etc.), requiring extremely low power in a feature-rich environment. These advancements, however, have significantly impacted the traditional clocking circuit.

这石英晶振产品行业趋势背后的主要驱动力与总消费量的减少有关动力强劲，同时提高整体性能。这一努力是为了促进实际工作实现电池驱动的终端解决方案(消费、医疗、物联网、工业等)，需要在功能丰富的环境中极低的功耗。然而，这些进步意义重大冲击了传统的时钟电路。

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As the low power operation becomes paramount, the current mirrors biasing the inverter amplifier stage in the Pierce Oscillator loop are “starving” the amplifier. This approach has a significant impact on the transconductance of the inverter amplifier block which, in-turn, has a profound effect on the forward gain margin (GM) of the closed-loop oscillator circuit.

当低功耗工作变得至关重要时，电流镜像偏置逆变放大器级在皮尔斯振荡器环路是“饥饿”放大器。这种方法对逆变器放大器块的跨导反过来对正向增益有深远的影响闭环振荡器电路的裕度(GM)。
The relationship between the forward gain (GM) and amplifier transconductance is defined as follows: GM = gm / gmcritical (1)

正向增益(GM)与放大器跨导的关系定义如下:GM = GM / gmcritical (1)艾博康的高质量石英晶体ABM8W-38.4000MHZ-4-B2U-T3,比较适合用于超低功耗MCU

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Whereas: gm = inverter amplifier’s transconductance in µA/V gm(critical) = critical transconductance value to keep the amplifier in linear region

而:逆变放大器在μ A/V中的跨导Gm(临界)=使放大器保持在线性区域的临界跨导值
For robust oscillations using an inverter amplifier as the gain stage, it has been a well-established industry practice to target GM > 5.0 with a minimum desired value of > 3.0.

对于鲁棒振荡使用逆变放大器作为增益级，它已经得到了广泛的认可行业惯例以通用的> 5.0为目标，期望的最小值为> 3.0。

For closed loop oscillator circuit, gm(critical) is defined as follows:
gm(critical) = 4 * ESR * (2πF)2 * (C0 + CL)2 (2)

对于闭环振荡器电路，gm(临界)定义如下:

gm(临界)= 4 * ESR * (2π f)2 * (C0 + CL)2 (2)
Whereas; ESR = Effective Series Resistance of the resonator element (generally a quartz crystal)… units in k?’s or ?’s.

而;
ESR =谐振器元件(通常为石英晶体)的有效串联电阻……单位为kΩ’s或Ω。

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F = Resonant frequency of the resonator element (in the case of quartz crystals, generally parallel resonant frequency @ a specific plating load)… units in kHz or MHz

C0 = Composite package and electrode capacitance of the resonator element……. units in pF.

CL = Plating load of the resonator element……. units in pF.

F =谐振器元件的谐振频率(在SMD晶振石英晶体的情况下，一般是平行的谐振频率@特定电镀负载)……单位为千赫或兆赫

C0 =谐振器元件的复合封装和电极电容.......单位在pF。

CL =谐振器元件的电镀负载.......单位在pF。

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