At Diodes Incorporated, respect for human rights is ingrained in our core values and in how we conduct business, interact with stakeholders (including customers, employees, and suppliers), and engage with the communities in which we operate. We are cognizant of the potential human rights issues and labor risks that may occur within the semiconductor supply chain, especially for the vulnerable populations in our society, and are committed to protecting and preserving these human rights and promoting human rights awareness.

在Diodes Incorporated，尊重人权根植于我们的核心价值观以及我们如何开展业务，与利益相关者(包括客户、员工和供应商)互动，与我们所在的社区建立联系。我们认识到这种潜力半导体或晶体振荡器供应链中可能出现的人权问题和劳工风险，特别是我们社会中的弱势群体，并致力于保护和维护这些人权，促进人权意识。

PI4ULS3V4857 能够将 1.2V 至 1.8V 主机侧电压转换为 1.8V 或 3.0V 的存储卡电压信号，反之亦然。这允许 SD 3.0 存储卡与最新的低压微处理器、SoC 和 ASIC 结合使用，其传输时间比其他数据存储解决方案短得多。

FN1220027	Diodes晶振	SaRonix-eCera™ FN	12.288MHz	±25ppm	-40°C ~ 85°C
FN1430053	Diodes晶振	SaRonix-eCera™ FN	14.318MHz	±25ppm	-40°C ~ 85°C
FN2000115	Diodes晶振	SaRonix-eCera™ FN	20MHz	±25ppm	-40°C ~ 85°C
FN2500156	Diodes晶振	SaRonix-eCera™ FN	25MHz	±20ppm	-20°C ~ 70°C
FN2500171	Diodes晶振	SaRonix-eCera™ FN	25MHz	±25ppm	-40°C ~ 85°C
FN2500175	Diodes晶振	SaRonix-eCera™ FN	25MHz	±25ppm	-40°C ~ 85°C
FN2500177	Diodes晶振	SaRonix-eCera™ FN	25.002MHz	±25ppm	-40°C ~ 85°C
FN2700077	Diodes晶振	SaRonix-eCera™ FN	27MHz	±20ppm	-20°C ~ 70°C
FN3000041	Diodes晶振	SaRonix-eCera™ FN	30MHz	±25ppm	-40°C ~ 85°C
FN3200033	Diodes晶振	SaRonix-eCera™ FN	32MHz	±25ppm	-40°C ~ 85°C
FN3270028	Diodes晶振	SaRonix-eCera™ FN	32.768MHz	±25ppm	-40°C ~ 85°C
FN3600001	Diodes晶振	SaRonix-eCera™ FN	36MHz	±25ppm	-40°C ~ 85°C
FN3600019	Diodes晶振	SaRonix-eCera™ FN	36MHz	±25ppm	-40°C ~ 85°C
FN3710001	Diodes晶振	SaRonix-eCera™ FN	37.125MHz	±25ppm	-40°C ~ 85°C
FN3840008	Diodes晶振	SaRonix-eCera™ FN	38.4MHz	±20ppm	-20°C ~ 70°C
FN4000162	Diodes晶振	SaRonix-eCera™ FN	40MHz	±20ppm	-20°C ~ 70°C
FN4800077	Diodes晶振	SaRonix-eCera™ FN	48MHz	±25ppm	-40°C ~ 85°C
FN5000118	Diodes晶振	SaRonix-eCera™ FN	50MHz	±25ppm	-40°C ~ 85°C
FN6660075	Diodes晶振	SaRonix-eCera™ FN	66.67MHz	±25ppm	-40°C ~ 85°C
FN6660076	Diodes晶振	SaRonix-eCera™ FN	66.66MHz	±25ppm	-40°C ~ 85°C
FNA620051	Diodes晶振	SaRonix-eCera™ FN	106.25MHz	±50ppm	-20°C ~ 70°C

PI4ULS3V4857 的时钟频率达到 208MHz，能够支持目前最快的 SD 卡接口 - SD 3.0 SDR104。该 6 位器件也适用于 SDR50 (100MHz)、SDR25 (50MHz)、DDR50 (50MHz) 和 SDR12 (25MHz) 操作。向后兼容性意味着它也可以处理传统的 SD 2.0 高速 (50MHz) 和默认速度(25MHz) 模式。

FND330009	Diodes晶振	SaRonix-eCera™ FN	133.33MHz	±50ppm	-20°C ~ 70°C
SXF000007	Diodes晶振	SaRonix-eCera™ SX	150MHz	±50ppm	-20°C ~ 70°C
SXF550007	Diodes晶振	SaRonix-eCera™ SX	155.52MHz	±50ppm	-20°C ~ 70°C
SXF620007	Diodes晶振	SaRonix-eCera™ SX	156.25MHz	±50ppm	-20°C ~ 70°C
UM2600002	Diodes晶振	SaRonix-eCera™ UM	26MHz	±50ppm	-30°C ~ 85°C
NX3261E0125.000000	Diodes晶振	SaRonix-eCera™ NX	125MHz	±50ppm	-40°C ~ 85°C
FN6660077	Diodes晶振	SaRonix-eCera™ FN	66.666MHz	±25ppm	-20°C ~ 70°C
FN6660079	Diodes晶振	SaRonix-eCera™ FN	66.667MHz	±50ppm	-20°C ~ 70°C
FN6660080	Diodes晶振	SaRonix-eCera™ FN	66.667MHz	±50ppm	-40°C ~ 85°C
FN7000003	Diodes晶振	SaRonix-eCera™ FN	70MHz	±50ppm	-40°C ~ 85°C
FN7200004	Diodes晶振	SaRonix-eCera™ FN	72MHz	±50ppm	-20°C ~ 70°C
FN7400001	Diodes晶振	SaRonix-eCera™ FN	74MHz	±50ppm	-20°C ~ 70°C
FN7420006	Diodes晶振	SaRonix-eCera™ FN	74.25MHz	±50ppm	-20°C ~ 70°C
FN7500038	Diodes晶振	SaRonix-eCera™ FN	75MHz	±50ppm	-20°C ~ 70°C
FN7500039	Diodes晶振	SaRonix-eCera™ FN	75MHz	±25ppm	-20°C ~ 70°C
FN7500045	Diodes晶振	SaRonix-eCera™ FN	75MHz	±50ppm	-40°C ~ 85°C
FN7500046	Diodes晶振	SaRonix-eCera™ FN	75MHz	±25ppm	-20°C ~ 70°C
FN7770021	Diodes晶振	SaRonix-eCera™ FN	77.76MHz	±50ppm	-40°C ~ 85°C
FN7770022	Diodes晶振	SaRonix-eCera™ FN	77.76MHz	±50ppm	-40°C ~ 85°C
FN7770023	Diodes晶振	SaRonix-eCera™ FN	77.76MHz	±50ppm	-20°C ~ 70°C
FN7770024	Diodes晶振	SaRonix-eCera™ FN	77.76MHz	±25ppm	-20°C ~ 70°C
FN7770025	Diodes晶振	SaRonix-eCera™ FN	77.76MHz	±50ppm	-20°C ~ 70°C

通过消除对外部电平转换器的需要，节省了大量的电路板空间。内置的100mA LDO 稳压器和电磁干扰 (EMI) 滤波器有助于进一步减少系统组件数量并限制物料清单成本。8kV 静电放电 (ESD) 保护也已集成到转换器设备中，从而确保长期运行。
PI4ULS3V4857采用小尺寸、20球WLCSP封装，现在可提供3000片.

FN7770026	Diodes晶振	SaRonix-eCera™ FN	77.76MHz	±25ppm	-20°C ~ 70°C
NX5061E0156.250000	Diodes晶振	SaRonix-eCera™ NX	156.25MHz	±50ppm	-40°C ~ 85°C
YNWMAX153	Diodes晶振	SaRonix-eCera™ YN	153.6MHz	±35ppm	-40°C ~ 85°C
NX3232E0156.250000	Diodes晶振	SaRonix-eCera™ NX	156.25MHz	±50ppm	-40°C ~ 85°C
SXF000005	Diodes晶振	SaRonix-eCera™ SX	150MHz	±50ppm	-40°C ~ 85°C
SXF550009	Diodes晶振	SaRonix-eCera™ SX	155.52MHz	±50ppm	-40°C ~ 85°C
SXF620003	Diodes晶振	SaRonix-eCera™ SX	156.25MHz	±50ppm	-40°C ~ 85°C
FDC500016	Diodes晶振	SaRonix-eCera™ FD	125MHz	±20ppm	-20°C ~ 70°C
FDC500019	Diodes晶振	SaRonix-eCera™ FD	125MHz	±20ppm	-20°C ~ 70°C
UM2600001	Diodes晶振	SaRonix-eCera™ UM	26MHz	±20ppm	-30°C ~ 85°C
FRSONT077	Diodes晶振	SaRonix-eCera™ FR	77.76MHz	±50ppm	-40°C ~ 85°C
SXF550011	Diodes晶振	SaRonix-eCera™ SX	155.52MHz	±20ppm	-20°C ~ 70°C
FN6660081	Diodes晶振	SaRonix-eCera™ FN	66.667MHz	±25ppm	-40°C ~ 85°C
FN7410004	Diodes晶振	SaRonix-eCera™ FN	74.175MHz	±25ppm	-40°C ~ 85°C
FN7420007	Diodes晶振	SaRonix-eCera™ FN	74.25MHz	±25ppm	-40°C ~ 85°C
FN7770028	Diodes晶振	SaRonix-eCera™ FN	77.76MHz	±25ppm	-40°C ~ 85°C
FN7770029	Diodes晶振	SaRonix-eCera™ FN	77.76MHz	±20ppm	-20°C ~ 70°C
FN8000056	Diodes晶振	SaRonix-eCera™ FN	80MHz	±50ppm	-40°C ~ 85°C
FN8000059	Diodes晶振	SaRonix-eCera™ FN	80MHz	±50ppm	-20°C ~ 70°C
FN8330020	Diodes晶振	SaRonix-eCera™ FN	83.33MHz	±50ppm	-40°C ~ 85°C
FN8500004	Diodes晶振	SaRonix-eCera™ FN	85MHz	±50ppm	-20°C ~ 70°C
FN9000013	Diodes晶振	SaRonix-eCera™ FN	90MHz	±50ppm	-20°C ~ 70°C

产品特性

1 ~ 166mhz频率范围
<1 ps RMS抖动

3.3V CMOS/TTL兼容逻辑电平

引脚兼容标准7.0 x 5.0mm包

用于标准回流和洗涤技术

低功耗待机模式

无铅和RoHS/绿色环保

产品描述

FN系列3.3V晶体时钟振荡器实现卓越的抖动和稳定的广泛操作条件和频率的范围。内部产生的输出时钟信号与非锁相环振荡器设计，是兼容的LVCMOS/LVTTL逻辑电平。的设备,可在磁带和卷轴上，是包含在一个7.0 x 5.0mm表面贴装陶瓷封装。应用程序

适用于低抖动或紧密稳定的应用:

以太网

光纤通道

SONET / SDH linecards

T1/E1, T3/E3线卡

SAS (Serial Attached SCSI)

服务器和存储平台